Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 208mOhm @ 8.5A, 15V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 632 pF @ 1000 V |
| Manufacturer | Wolfspeed, Inc. |
| Mounting Type | Through Hole |
| Product Status | Active |
| Series | C3M™ |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +15V, -4V |
| Vgs(th) (Max) @ Id | 3.6V @ 2.33mA |
| Drain-to-Source Voltage | 1200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Max Power Dissipation | 97W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
| Operating Temperature | -55°C~150°C(TJ) |
|---|