WNSC12650T6J

WeEn Semiconductors

WNSC12650T6J

Datasheet

Analog & Power

DIODE SIL CARBIDE 650V 12A 5DFN

Obsolete4-VSFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberWNSC1
Capacitance @ Vr, F328pF @ 1V, 1MHz
ManufacturerWeEn Semiconductors
Mounting TypeSurface Mount
Product StatusObsolete
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky

Electrical

Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max) @ If1.8 V @ 12 A
Current - Average Rectified (Io)12A
Current - Reverse Leakage @ Vr60 µA @ 650 V
SpeedNo Recovery Time > 500mA (Io)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case4-VSFN Exposed Pad
Supplier Device Package5-DFN (8x8)

Environmental

Operating Temperature - Junction175°C