WG50N65DHWQ

WeEn Semiconductors

WG50N65DHWQ

Datasheet

Analog & Power

IGBT TRENCH FD ST 650V 91A TO247

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Gate Charge160 nC
IGBT TypeTrench Field Stop
Input TypeStandard
ManufacturerWeEn Semiconductors
Mounting TypeThrough Hole
Product StatusActive
Reverse Recovery Time (trr)105 ns
Switching Energy1.7mJ (on), 600µJ (off)
Td (on/off) @ 25°C66ns/163ns
Test Condition400V, 50A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic2V @ 15V, 50A

Electrical

Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)91 A
Current - Collector Pulsed (Icm)200 A
Power - Max278 W

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

Environmental

Operating Temperature-55°C~150°C(TJ)