NXPSC08650BJ

WeEn Semiconductors

NXPSC08650BJ

Datasheet

Analog & Power

DIODE SIL CARBIDE 650V 8A D2PAK

ObsoleteTO-263-3, D2PAK (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberNXPSC
Capacitance @ Vr, F260pF @ 1V, 1MHz
ManufacturerWeEn Semiconductors
Mounting TypeSurface Mount
Product StatusObsolete
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky

Electrical

Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 8 A
Current - Average Rectified (Io)8A
Current - Reverse Leakage @ Vr230 µA @ 650 V
SpeedNo Recovery Time > 500mA (Io)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK

Environmental

Operating Temperature - Junction175°C (Max)