NXPSC06650D6J

WeEn Semiconductors

NXPSC06650D6J

Datasheet

Analog & Power

DIODE SIL CARBIDE 650V 6A DPAK

ObsoleteTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberNXPSC
Capacitance @ Vr, F190pF @ 1V, 1MHz
ManufacturerWeEn Semiconductors
Mounting TypeSurface Mount
Product StatusObsolete
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky

Electrical

Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 6 A
Current - Average Rectified (Io)6A
Current - Reverse Leakage @ Vr200 µA @ 650 V
SpeedNo Recovery Time > 500mA (Io)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK

Environmental

Operating Temperature - Junction175°C (Max)