BYV410-600PQ

WeEn Semiconductors

BYV410-600PQ

Datasheet

Analog & Power

DIODE ARRAY GP 600V 20A TO220E

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberBYV410
Diode Configuration1 Pair Common Cathode
ManufacturerWeEn Semiconductors
Mounting TypeThrough Hole
Product StatusActive
Reverse Recovery Time (trr)55 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 10 A
Current - Average Rectified (Io) (per Diode)20A
Current - Reverse Leakage @ Vr10 µA @ 600 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

PackageBulk
Package / CaseTO-220-3
Supplier Device PackageTO-220E

Environmental

Operating Temperature - Junction175°C