BYV10MX-600PQ

WeEn Semiconductors

BYV10MX-600PQ

Datasheet

Analog & Power

DIODE GEN PURP 600V 10A TO220F

ActiveTO-220-2 Full Pack, Isolated TabAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberBYV10
ManufacturerWeEn Semiconductors
Mounting TypeThrough Hole
PackagingTube
Part StatusActive
Reverse Recovery Time (trr)35 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If2 V @ 10 A
Current - Average Rectified (Io)10A
Current - Reverse Leakage @ Vr10 µA @ 600 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

Package / CaseTO-220-2 Full Pack, Isolated Tab
Supplier Device PackageTO-220F

Environmental

Operating Temperature - Junction175°C