BYC30WT-600PQ

WeEn Semiconductors

BYC30WT-600PQ

Datasheet

Analog & Power

DIODE GEN PURP 600V 30A TO247-3

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberBYC30
ManufacturerWeEn Semiconductors
Mounting TypeThrough Hole
PackagingTube
Part StatusActive
Reverse Recovery Time (trr)22 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If2.75 V @ 30 A
Current - Average Rectified (Io)30A
Current - Reverse Leakage @ Vr10 µA @ 600 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

Package / CaseTO-247-3
Supplier Device PackageTO-247-3

Environmental

Operating Temperature - Junction175°C (Max)