BYC30-1200PQ

WeEn Semiconductors

BYC30-1200PQ

Datasheet

Analog & Power

DIODE GEN PURP 1.2KV 30A TO220AC

ActiveTO-220-2Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberBYC30
ManufacturerWeEn Semiconductors
Mounting TypeThrough Hole
Product StatusActive
Reverse Recovery Time (trr)65 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If3.3 V @ 30 A
Current - Average Rectified (Io)30A
Current - Reverse Leakage @ Vr250 µA @ 1200 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

PackageTube
Package / CaseTO-220-2
Supplier Device PackageTO-220AC

Environmental

Operating Temperature - Junction175°C (Max)