Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 3mOhm @ 30A, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 21250 pF @ 20 V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Series | TrenchFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 450mV @ 2mA (Min) |
| Drain-to-Source Voltage | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Max Power Dissipation | 250W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| Operating Temperature | -55°C~175°C(TJ) |
|---|