SUP80090E-GE3

Vishay Siliconix

SUP80090E-GE3

Datasheet

Analog & Power

MOSFET N-CH 150V 128A TO220AB

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs9.4mOhm @ 30A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3425 pF @ 75 V
ManufacturerVishay Siliconix
Mounting TypeThrough Hole
Product StatusActive
SeriesThunderFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage150 V
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Current - Continuous Drain (Id) @ 25°C128A (Tc)
Max Power Dissipation375W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

Environmental

Operating Temperature-55°C~175°C(TJ)