Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 20A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 218 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9600 pF @ 40 V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Through Hole |
| Product Status | Active |
| Series | TrenchFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain-to-Source Voltage | 80 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
| Max Power Dissipation | 375W (Tc) |
| Package | Bulk |
|---|---|
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| Operating Temperature | -55°C ~ 175°C (TJ) |
|---|