SUM90142E-GE3

Vishay Siliconix

SUM90142E-GE3

Datasheet

Analog & Power

MOSFET N-CH 200V 90A TO263

ActiveTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs15mOhm @ 30A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3120 pF @ 100 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesThunderFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage200 V
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Max Power Dissipation375W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263 (D²Pak)

Environmental

Operating Temperature-55°C~175°C(TJ)