SUM52N20-39P-E3

Vishay Siliconix

SUM52N20-39P-E3

Datasheet

Analog & Power

MOSFET N-CH 200V 52A TO263

ActiveTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs38mOhm @ 20A, 15V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs185 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds4220 pF @ 25 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id4.5V @ 250µA

Electrical

Drain-to-Source Voltage200 V
Drive Voltage (Max Rds On, Min Rds On)10V, 15V
Current - Continuous Drain (Id) @ 25°C52A (Tc)
Max Power Dissipation3.12W (Ta), 250W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263 (D²Pak)

Environmental

Operating Temperature-55°C~175°C(TJ)