SUG90090E-GE3

Vishay Siliconix

SUG90090E-GE3

Datasheet

Analog & Power

MOSFET N-CH 200V 100A TO247AC

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs9.5mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs129 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5220 pF @ 100 V
ManufacturerVishay Siliconix
Mounting TypeThrough Hole
Product StatusActive
SeriesThunderFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage200 V
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Max Power Dissipation395W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247AC

Environmental

Operating Temperature-55°C~175°C(TJ)