SQS420EN-T1_GE3

Vishay Siliconix

SQS420EN-T1_GE3

Datasheet

Analog & Power

MOSFET N-CH 20V 8A PPAK1212-8

ActivePowerPAK® 1212-8Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs28mOhm @ 5A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds490 pF @ 10 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Max Power Dissipation18W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CasePowerPAK® 1212-8
Supplier Device PackagePowerPAK® 1212-8

Environmental

Operating Temperature-55°C~175°C(TJ)