SQR50N04-3M8_GE3

Vishay Siliconix

SQR50N04-3M8_GE3

Datasheet

Analog & Power

MOSFET N-CH 40V 50A DPAK

ActiveTO-252-3, DPAK (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.8mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6700 pF @ 25 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 250µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Max Power Dissipation136W (Tc)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101