SQJB70EP-T1_BE3

Vishay Siliconix

SQJB70EP-T1_BE3

Datasheet

Analog & Power

MOSFET 2N-CH 100V 11.3A PPAK SO8

ActivePowerPAK® SO-8 DualAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs95mOhm @ 4A, 10V
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds220pF @ 25V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3.5V @ 250µA

Electrical

Drain-to-Source Voltage100V
Current - Continuous Drain (Id) @ 25°C11.3A (Tc)
Power - Max27W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101