SQJB60EP-T2_GE3

Vishay Siliconix

SQJB60EP-T2_GE3

Datasheet

Analog & Power

MOSFET 2N-CH 60V 30A PPAK SO8

ActivePowerPAK® SO-8 DualAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs12mOhm @ 10A, 10V
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1600pF @ 25V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTape & Reel (TR)
Part StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Power - Max48W (Tc)

Mechanical

Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101