SQJA26EP-T1_GE3

Vishay Siliconix

SQJA26EP-T1_GE3

Datasheet

Analog & Power

AUTOMOTIVE N-CHANNEL 30 V (D-S)

ActivePowerPAK® SO-8Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs0.77mOhm @ 15A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9778 pF @ 25 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C410A (Tc)
Max Power Dissipation500W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CasePowerPAK® SO-8
Supplier Device PackagePowerPAK® SO-8

Environmental

Operating Temperature-55°C ~ 175°C (TJ)