SQJA12EP-T1_GE3

Vishay Siliconix

SQJA12EP-T1_GE3

Datasheet

Analog & Power

N-CHANNEL 100-V (D-S) 175C MOSFE

ActiveTape & Reel (TR) Cut Tape (CT)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs8.6mOhm @ 10A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs49.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3635 pF @ 25 V
ManufacturerVishay Siliconix
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)

Environmental

Operating Temperature-55°C ~ 125°C