SQJ570EP-T1_BE3

Vishay Siliconix

SQJ570EP-T1_BE3

Datasheet

Analog & Power

MOSFET N/P-CH 100V 15A PPAK SO8

ActivePowerPAK® SO-8 DualAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V
ConfigurationN and P-Channel
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V, 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds600pF @ 25V, 650pF @ 25V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage100V
Current - Continuous Drain (Id) @ 25°C15A (Tc), 9.5A (Tc)
Power - Max27W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101