SQJ560EP-T1_GE3

Vishay Siliconix

SQJ560EP-T1_GE3

Datasheet

Analog & Power

MOSFET N/P-CH 60V 30A PPAK SO8

ActivePowerPAK® SO-8 DualAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V
ConfigurationN and P-Channel
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V, 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1650pF @ 25V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C30A (Tc), 18A (Tc)
Power - Max34W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101