SQJ460AEP-T1_BE3

Vishay Siliconix

SQJ460AEP-T1_BE3

Datasheet

Analog & Power

N-CHANNEL 60-V (D-S) 175C MOSFET

ActivePowerPAK® SO-8Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs8.7mOhm @ 10.7A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2654 pF @ 30 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C58A (Tc)
Max Power Dissipation68W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101