SQJ401EP-T1_GE3

Vishay Siliconix

SQJ401EP-T1_GE3

Datasheet

Analog & Power

MOSFET P-CH 12V 32A PPAK SO-8

ActivePowerPAK® SO-8Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs6mOhm @ 15A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs164 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds10015 pF @ 6 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesAutomotive, AEC-Q101, TrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage12 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Max Power Dissipation83W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CasePowerPAK® SO-8
Supplier Device PackagePowerPAK® SO-8

Environmental

Operating Temperature-55°C~175°C(TJ)