SQJ211ELP-T1_GE3

Name: SQJ211ELP-T1_GE3
Brand: Vishay Siliconix

Analog & Power

MOSFET P-CH 100V 33.6A PPAK SO-8

ActivePowerPAK® SO-8Analog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	30mOhm @ 8A, 10V
Base Product Number	SQJ211
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	3800 pF @ 25 V
Manufacturer	Vishay Siliconix
Mounting Type	Surface Mount
Product Status	Active
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA

Drain-to-Source Voltage	100 V
Current - Continuous Drain (Id) @ 25°C	33.6A (Tc)
Max Power Dissipation	68W (Tc)

Operating Temperature	-55°C~175°C(TJ)