SQA446CEJW-T1_GE3

Vishay Siliconix

SQA446CEJW-T1_GE3

Datasheet

Analog & Power

AUTOMOTIVE N-CHANNEL 20 V (D-S)

Active6-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs17.5mOhm @ 4.5A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds910 pF @ 10 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount, Wettable Flank
Product StatusActive
SeriesAutomotive, AEC-Q101, TrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.3V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Max Power Dissipation13.6W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case6-PowerVDFN
Supplier Device PackagePowerPAK®SC-70W-6

Environmental

Operating Temperature-55°C~175°C(TJ)