SQA442EJ-T1_GE3

Vishay Siliconix

SQA442EJ-T1_GE3

Datasheet

Analog & Power

MOSFET N-CH 60V 9A PPAK SC70-6

ActivePowerPAK® SC-70-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs32mOhm @ 3A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds636 pF @ 25 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesAutomotive, AEC-Q101, TrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Max Power Dissipation13.6W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CasePowerPAK® SC-70-6
Supplier Device PackagePowerPAK® SC-70-6

Environmental

Operating Temperature-55°C~175°C(TJ)