SQ3461EV-T1_BE3

Vishay Siliconix

SQ3461EV-T1_BE3

Datasheet

Analog & Power

P-CHANNEL 12-V (D-S) 175C MOSFET

ActiveSOT-23-6 Thin, TSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs25mOhm @ 7.9A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2000 pF @ 6 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage12 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Max Power Dissipation5W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101