SQ2398ES-T1_GE3

Vishay Siliconix

SQ2398ES-T1_GE3

Datasheet

Analog & Power

MOSFET N-CH 100V 1.6A SOT23-3

ActiveTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs300mOhm @ 1.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds152 pF @ 50 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C1.6A (Tc)
Max Power Dissipation2W (Tc)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101