SQ2364EES-T1_GE3

Vishay Siliconix

SQ2364EES-T1_GE3

Datasheet

Analog & Power

MOSFET N-CH 60V 2A SOT23-3

ActiveTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs240mOhm @ 2A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds330 pF @ 25 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Max Power Dissipation3W (Tc)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101