SQ2319ES-T1-GE3

Vishay Siliconix

SQ2319ES-T1-GE3

Datasheet

Analog & Power

MOSFET P-CH 40V 4.6A TO-236

ObsoleteTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs75mOhm @ 3A, 10V
Base Product NumberSQ2319
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds620 pF @ 25 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage40 V
Current - Continuous Drain (Id) @ 25°C4.6A (Tc)

Mechanical

PackageCut Tape (CT)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)