SIZF5300DT-T1-GE3

Vishay Siliconix

SIZF5300DT-T1-GE3

Datasheet

Analog & Power

MOSFET 2N-CH 30V 35A PWRPAIR

Active12-PowerPair™Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.43mOhm @ 10A, 10V
Base Product NumberSIZF5300
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1480pF @ 15V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET® Gen V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C35A (Ta), 125A (Tc)
Power - Max4.5W (Ta), 56.8W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case12-PowerPair™
Supplier Device PackagePowerPAIR® 3x3FS

Environmental

Operating Temperature-55°C ~ 150°C (TJ)