SIZ920DT-T1-GE3

Vishay Siliconix

SIZ920DT-T1-GE3

Datasheet

Analog & Power

MOSFET 2N-CH 30V 40A 8POWERPAIR

Obsolete8-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7.1mOhm @ 18.9A, 10V
Base Product NumberSIZ920
Configuration2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1260pF @ 15V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusObsolete
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C40A
Power - Max39W, 100W

Mechanical

Package / Case8-PowerWDFN
Supplier Device Package8-PowerPair® (6x5)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)