SIZ710DT-T1-GE3

Vishay Siliconix

SIZ710DT-T1-GE3

Datasheet

Analog & Power

MOSFET 2N-CH 20V 16A 6PWRPAIR

Discontinued6-PowerPair™Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs6.8mOhm @ 19A, 10V
Base Product NumberSIZ710
Configuration2 N-Channel (Half Bridge)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds820pF @ 10V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusLast Time Buy
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.2V @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C16A, 35A
Power - Max27W, 48W

Mechanical

Package / Case6-PowerPair™
Supplier Device Package6-PowerPair™

Environmental

Operating Temperature-55°C ~ 150°C (TJ)