SIZ346DT-T1-GE3

Vishay Siliconix

SIZ346DT-T1-GE3

Datasheet

Analog & Power

MOSFET 2N-CH 30V 17A/30A 8PWR33

Active8-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
Base Product NumberSIZ346
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs5nC @ 4.5V, 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds325pF @ 15V, 650pF @ 15V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesPowerPAIR®, TrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.2V @ 250µA, 2.4V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C17A (Tc), 30A (Tc)
Power - Max16W, 16.7W

Mechanical

Package / Case8-PowerWDFN
Supplier Device Package8-Power33 (3x3)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)