SIZ320DT-T1-GE3

Vishay Siliconix

SIZ320DT-T1-GE3

Datasheet

Analog & Power

MOSFET 2N-CH 25V 30A/40A 8PWR33

Discontinued8-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs8.3mOhm @ 8A, 10V, 4.24mOhm @ 10A, 10V
Base Product NumberSIZ320
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs8.9nC @ 4.5V, 11.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds660pF @ 12.5V, 1370pF @ 12.5V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusLast Time Buy
SeriesPowerPAIR®, TrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.4V @ 250µA

Electrical

Drain-to-Source Voltage25V
Current - Continuous Drain (Id) @ 25°C30A (Tc), 40A (Tc)
Power - Max16.7W, 31W

Mechanical

Package / Case8-PowerWDFN
Supplier Device Package8-Power33 (3x3)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)