SIUD412ED-T1-GE3

Vishay Siliconix

SIUD412ED-T1-GE3

Datasheet

Analog & Power

MOSFET N-CH 12V 500MA PPAK 0806

ActivePowerPAK® 0806Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs340mOhm @ 500mA, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.71 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds21 pF @ 6 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±5V
Vgs(th) (Max) @ Id900mV @ 250µA

Electrical

Drain-to-Source Voltage12 V
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C500mA (Tc)
Max Power Dissipation1.25W (Ta)

Mechanical

Package / CasePowerPAK® 0806
Supplier Device PackagePowerPAK® 0806

Environmental

Operating Temperature-55°C ~ 150°C (TJ)