SISS98DN-T1-GE3

Vishay Siliconix

SISS98DN-T1-GE3

Datasheet

Analog & Power

MOSFET N-CH 200V 14.1A PPAK

ActivePowerPAK® 1212-8Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs105mOhm @ 7A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds608 pF @ 100 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesThunderFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage200 V
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Current - Continuous Drain (Id) @ 25°C14.1A (Tc)
Max Power Dissipation57W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CasePowerPAK® 1212-8
Supplier Device PackagePowerPAK® 1212-8

Environmental

Operating Temperature-55°C~150°C(TJ)