SISS72DN-T1-GE3

Vishay Siliconix

SISS72DN-T1-GE3

Datasheet

Analog & Power

MOSFET N-CH 150V 7A/25.5A PPAK

ActivePowerPAK® 1212-8SAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs42mOhm @ 7A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds550 pF @ 75 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage150 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C7A (Ta), 25.5A (Tc)
Max Power Dissipation5.1W (Ta), 65.8W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CasePowerPAK® 1212-8S
Supplier Device PackagePowerPAK® 1212-8S

Environmental

Operating Temperature-55°C~150°C(TJ)