Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 15A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 138 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4930 pF @ 15 V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (TR) Cut Tape (CT) |
| Part Status | Active |
| Series | TrenchFET® Gen III |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Drain-to-Source Voltage | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 25.9A (Ta), 94A (Tc) |
| Max Power Dissipation | 5.1W (Ta), 65.8W (Tc) |
| Package / Case | PowerPAK® 1212-8S |
|---|---|
| Supplier Device Package | PowerPAK® 1212-8S |
| Operating Temperature | -55°C ~ 150°C (TJ) |
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