SISHA06DN-T1-GE3

Vishay Siliconix

SISHA06DN-T1-GE3

Datasheet

Analog & Power

N-CHANNEL 30 V (D-S) MOSFET POWE

ActivePowerPAK® 1212-8SHAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3mOhm @ 10A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3932 pF @ 15 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)+20V, -16V
Vgs(th) (Max) @ Id2.4V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C28.1A (Ta), 104A (Tc)
Max Power Dissipation3.7W (Ta), 52W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CasePowerPAK® 1212-8SH
Supplier Device PackagePowerPAK® 1212-8SH

Environmental

Operating Temperature-55°C~150°C(TJ)