SISH407DN-T1-GE3

Vishay Siliconix

SISH407DN-T1-GE3

Datasheet

Analog & Power

MOSFET P-CH 20V 15.4A/25A PPAK

ActivePowerPAK® 1212-8SHAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs9.5mOhm @ 15.3A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs93.8 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds2760 pF @ 10 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C15.4A (Ta), 25A (Tc)
Max Power Dissipation3.6W (Ta), 33W (Tc)

Mechanical

Package / CasePowerPAK® 1212-8SH
Supplier Device PackagePowerPAK® 1212-8SH

Environmental

Operating Temperature-55°C ~ 150°C (TJ)