SISH112DN-T1-GE3

Vishay Siliconix

SISH112DN-T1-GE3

Datasheet

Analog & Power

MOSFET N-CH 30V 11.3A PPAK

ActivePowerPAK® 1212-8SHAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7.5mOhm @ 17.8A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2610 pF @ 15 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C11.3A (Tc)
Max Power Dissipation1.5W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CasePowerPAK® 1212-8SH
Supplier Device PackagePowerPAK® 1212-8SH

Environmental

Operating Temperature-50°C~150°C(TJ)