Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 6.2mOhm @ 19.5A, 4.5V |
|---|---|
| Base Product Number | SISH106 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 4.5 V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | TrenchFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Drain-to-Source Voltage | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Ta) |
| Max Power Dissipation | 1.5W (Ta) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | PowerPAK® 1212-8SH |
| Supplier Device Package | PowerPAK® 1212-8SH |
| Operating Temperature | -55°C~150°C(TJ) |
|---|