SISF04DN-T1-GE3

Vishay Siliconix

SISF04DN-T1-GE3

Datasheet

Analog & Power

MOSFET 2N-CH 30V 30A PPAK 1212-8

ActivePowerPAK® 1212-8SCDAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4mOhm @ 7A, 10V
Base Product NumberSISF04
Configuration2 N-Channel (Dual) Common Drain
Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2600pF @ 15V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesTrenchFET® Gen IV
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.3V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C30A (Ta), 108A (Tc)
Power - Max5.2W (Ta), 69.4W (Tc)

Mechanical

Package / CasePowerPAK® 1212-8SCD
Supplier Device PackagePowerPAK® 1212-8SCD

Environmental

Operating Temperature-55°C ~ 150°C (TJ)