SISA66DN-T1-GE3

Name: SISA66DN-T1-GE3
Brand: Vishay Siliconix

Analog & Power

MOSFET N-CH 30V 40A PPAK1212-8

ActivePowerPAK® 1212-8Analog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	2.3mOhm @ 15A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	3014 pF @ 15 V
Manufacturer	Vishay Siliconix
Mounting Type	Surface Mount
Packaging	Tape & Reel (TR)
Part Status	Active
Series	TrenchFET® Gen IV
Technology	MOSFET (Metal Oxide)
Vgs (Max)	+20V, -16V
Vgs(th) (Max) @ Id	2.2V @ 1mA

Drain-to-Source Voltage	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Max Power Dissipation	52W (Tc)

Package / Case	PowerPAK® 1212-8
Supplier Device Package	PowerPAK® 1212-8

Operating Temperature	-55°C ~ 150°C (TJ)