SIS932EDN-T1-GE3

Vishay Siliconix

SIS932EDN-T1-GE3

Datasheet

Analog & Power

MOSFET 2N-CH 30V 6A PPAK 1212

ActivePowerPAK® 1212-8 DualAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs22mOhm @ 10A, 4.5V
Base Product NumberSIS932
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1000pF @ 15V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.4V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Power - Max2.6W (Ta), 23W (Tc)

Mechanical

Package / CasePowerPAK® 1212-8 Dual
Supplier Device PackagePowerPAK® 1212-8 Dual

Environmental

Operating Temperature-55°C ~ 150°C (TJ)