SIS890ADN-T1-GE3

Vishay Siliconix

SIS890ADN-T1-GE3

Datasheet

Analog & Power

MOSFET N-CH 100V 7.6A/24.7A PPAK

ActivePowerPAK® 1212-8Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs25.5mOhm @ 10A, 10V
Base Product NumberSIS890
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1330 pF @ 50 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Current - Continuous Drain (Id) @ 25°C7.6A (Ta), 24.7A (Tc)
Max Power Dissipation3.6W (Ta), 39W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CasePowerPAK® 1212-8
Supplier Device PackagePowerPAK® 1212-8

Environmental

Operating Temperature-55°C~150°C(TJ)