SIS626DN-T1-GE3

Vishay Siliconix

SIS626DN-T1-GE3

Datasheet

Analog & Power

MOSFET N-CH 25V 16A PPAK1212-8

ObsoletePowerPAK® 1212-8Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs9mOhm @ 10A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1925 pF @ 15 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.4V @ 250µA

Electrical

Drain-to-Source Voltage25 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Max Power Dissipation52W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CasePowerPAK® 1212-8
Supplier Device PackagePowerPAK® 1212-8

Environmental

Operating Temperature-55°C~150°C(TJ)